TOSHIBA 
مشخصات ماسفتTPH2R306NH.L1Q
ماسفتTPH2R306NH.L1Q
Part Number .
1
Number of Channels .
Enhancement
Channel Mode .
N-Channel
Transistor Polarity .
-55C
Minimum Operating Temperature .
+150C
Maximum Operating Temperature .
Reel
Packaging .
SMD/SMT
Mounting Style .
±20V
Vgs - Gate - Source Voltage .
1.9mΩ
Rds On - Drain - Source Resistance .
60V
Vds - Drain - Source Breakdown Voltage .
Single
Configuration .
2V
Vgs th - Gate - Source Threshold Voltage .
72nC
Qg - Gate Charge .
78W
Pd - Power Dissipation .
130A
Id - Continuous Drain Current .
SOIC-8
Package-Case .
