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مشخصات گانفت CID10N65F
گانفت CID10N65F
Part Number .
1
Number of Channels .
Enhancement
Channel Mode .
N-Channel
Transistor Polarity .
-55C
Minimum Operating Temperature .
+7V
Vgs - Gate - Source Voltage .
+150C
Maximum Operating Temperature .
Tube
Packaging .
Through Hole
Mounting Style .
7.2nC
Qg - Gate Charge .
Single
Configuration .
650V
Vds - Drain - Source Breakdown Voltage .
1.9V
Vgs th - Gate - Source Threshold Voltage .
10A
Id - Continuous Drain Current .
160mΩ
Rds On - Drain - Source Resistance .
96W
Pd - Power Dissipation .
TO-220-3
Package-Case .
